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| SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 FEBRUARY 1996 7 FEATURES * For AF drivers and output stages * High collector current and Low VCE(sat) COMPLEMENTARY TYPE PARTMARKING DETAIL BCP68 BCP69 BCP69 25 C BCP69 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb =25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. -25 -20 -5 -100 -10 -10 -0.5 - 0.6 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE -25 -20 -5 -2 -1 2 -55 to +150 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). TYP. MAX. UNIT V V V nA CONDITIONS. IC=-10A IC=- 30mA IE=-10A VCB=-25V VCB=-25V, Tamb=150C VEB=-5V IC=-1A, IB=-100mA* IC=-5A, VCE=-10V* IC=-1A, VCE=-1V* IC=-5mA, VCE=-10V* IC=-500mA, VCE=-1V* IC=-500mA, VCE=-1V* MHz IC=-100mA, VCE=-5V, f=100MHz A A Emitter Cut-Off Current IEBO VCE(sat) VBE(on) V V V -1.0 400 400 50 Static Forward Current hFE 63 BCP69 Transfer Ratio BCP69-25 160 Transition Frequency fT 250 100 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FMMT549 datasheet. 3 - 20 |
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